Thin-film transistors having a metal nitride source material and related methods
AssigneeZinite Corporation
InventorsDouglas Barlage, Alex Ma, Gem Shoute
Life of this patent
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Abstract
An example thin-film transistor includes a substrate, a source including a body of source material on the substrate, a drain including a body of drain material on the substrate, a body of channel material between the source and the drain, a body of gate dielectric material on the body of channel material, and a body of gate material on the body of gate dielectric material. The source material includes a metal nitride.
Claims24
A thin-film transistor comprising:
- a substrate;
- a source including a body of source material on the substrate;
- a drain including a body of drain material on the substrate;
- a body of channel material between the source and the drain;
- a body of gate dielectric material on the body of channel material;
- and
- a body of gate material on the body of gate dielectric material;
- wherein the source material comprises a metal nitride;
- wherein the source further comprises a source carrier reservoir of a reservoir material for mitigating carrier starvation between the body of source material and the body of channel material;
- and
- wherein the body of source material and the source carrier reservoir are in contact with the body of channel material.
A method of manufacturing a thin-film transistor, the method comprising:
- forming a source including a body of source material on a substrate;
- forming a drain including a body of drain material on the substrate;
- forming a body of channel material between the source and the drain;
- forming a body of gate dielectric material on the body of channel material;
- and
- forming a body of gate material on the body of gate dielectric material;
- wherein the source material comprises a metal nitride;
- wherein the forming of the body of channel material comprises:
- forming a first layer of channel material;
- performing a treatment on the first layer of channel material;
- and
- forming a second layer of channel material on the first layer of channel material.
A method of manufacturing a thin-film transistor, the method comprising:
- forming a source including a body of source material on a substrate;
- forming a drain including a body of drain material on the substrate;
- forming a body of channel material between the source and the drain;
- forming a source carrier reservoir of a reservoir material for mitigating carrier starvation between the body of source material and the body of channel material;
- forming a body of gate dielectric material on the body of channel material;
- and
- forming a body of gate material on the body of gate dielectric material;
- wherein the source material comprises a metal nitride;
- wherein the channel material is formed of an oxide semiconductor;
- and
- wherein the body of source material and the source carrier reservoir are in contact with the body of channel material.
A method of manufacturing a thin-film transistor, the method comprising:
- forming a source including a body of source material on a substrate;
- forming a drain including a body of drain material on the substrate;
- forming a source carrier reservoir of a reservoir material for mitigating carrier starvation between the body of source material and a body of channel material;
- forming the body of channel material between the source and the drain;
- forming a body of gate dielectric material on the body of channel material;
- and
- forming a body of gate material on the body of gate dielectric material;
- wherein the source material comprises a metal nitride;
- and
- wherein the body of source material and the source carrier reservoir are in contact with the body of channel material.
Dependencies are inferred from the claim text.