US 12,671,056 B2 · Ion milling device

Abstract

In order to improve the processing reproducibility, an ion milling device 100 includes a sample chamber 107, a sample stage 102 that is disposed in the sample chamber on which a sample is placed, an ion source 101 that emits an unfocused ion beam toward the sample, a control unit 112 that controls an output of the ion beam, an oscillator 104 that is disposed in the sample chamber, and an oscillation circuit 111 that oscillates the oscillator and outputs an oscillation signal to the control unit, in which the control unit controls the output of the ion beam such that a vibrational frequency change amount of the oscillator per unit time due to deposition of sputtered particles generated by irradiating the sample with the ion beam on the oscillator is kept within a predetermined range.

Claims15

Dependent claims

An ion milling device comprising:

a sample chamber;
a sample stage that is disposed in the sample chamber and on which a sample is placed;
an ion source that emits an unfocused ion beam toward the sample;
a control unit that controls an output of the ion beam;
an oscillator that is disposed in the sample chamber;
and
an oscillation circuit that oscillates the oscillator and outputs an oscillation signal to the control unit, wherein
the control unit controls the output of the ion beam such that a vibrational frequency change amount of the oscillator per unit time due to deposition of sputtered particles generated by irradiating the sample with the ion beam on the oscillator is kept within a predetermined range.

5 more elements

An ion milling device comprising:

a sample chamber;
a sample stage that is disposed in the sample chamber and on which a sample is placed;
an ion source that emits an unfocused ion beam toward the sample;
a control unit that controls an output of the ion beam;
an oscillator that is disposed in the sample chamber;
an oscillation circuit that oscillates the oscillator and outputs an oscillation signal to the control unit, wherein the control unit controls the output of the ion beam such that a vibrational frequency change amount of the oscillator per unit time due to deposition of sputtered particles generated by irradiating the sample with the ion beam on the oscillator is kept within a predetermined range;
and
trap between the sample stage and the oscillator, wherein a predetermined voltage from a power supply circuit is applied to the trap, and the predetermined voltage is a voltage at which charged particles of the sputtering particles are trapped.

5 more elements

Dependencies are inferred from the claim text.

Ion milling device

Life of this patent

Ion milling device

Life of this patent

Abstract

Claims15