NAND detect empty page scan using subsets of wordlines on a page

A memory device, comprising:

• a memory;
• and
• a controller configured to:
• identify a plurality of word line groups, included in a block of the memory, that include erased pages of the block;
• test the plurality of word line groups to determine a respective charge gain for each word line group of the plurality of word line groups;
• determine that an erased threshold voltage distribution of a subset of word line groups of the plurality of word line groups satisfies a threshold based on the subset of word line groups being associated with a greatest amount of charge gain and the test;
• and
• perform an empty page scan for the subset of word line groups.

A method, comprising:

• determining, by a controller of a memory device, an offset voltage for a NAND detect empty page (NDEP) scan,
• wherein the offset voltage is determined based on one or more parameters associated with an erased page of a block included in a memory of the memory device, and
• wherein a magnitude of the offset voltage decreases as a quantity of program-erase cycles (PECs) accumulated for memory cells associated with the erased page increases;
• determining, by the controller, a voltage threshold for the NDEP scan based on the offset voltage;
• and
• performing, by the controller, the NDEP scan for the erased page based on the voltage threshold.