Memory system, operating method of the memory system, and interface circuit of the memory system
AssigneeSamsung Electronics Co., Ltd.
InventorsAnil Kavala, Youngmin Jo, Jungjune Park, Chiweon Yoon
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AssigneeSamsung Electronics Co., Ltd.
InventorsAnil Kavala, Youngmin Jo, Jungjune Park, Chiweon Yoon
Estimating the term…
Provided is a memory system including a memory device including a plurality of non-volatile memories, each of the plurality of non-volatile memories being electrically connected to a buffer chip, and a memory controller electrically connected to the buffer chip and configured to transmit a reference clock signal used in correction of a data signal, wherein the buffer chip includes a delay clock generation chain configured to generate a first delay clock signal or a second delay clock signal from the reference clock signal, a first register configured to store the first delay clock signal, and a second register configured to store the second delay clock signal, and wherein the buffer chip is configured to perform compensation on a strobe signal of the data signal based on the first delay clock signal, and perform compensation on the data signal based on the second delay clock signal.
A memory system comprising:
An operating method of a memory system comprising a memory device and a memory controller, the memory device comprising a plurality of non-volatile memories, each of the plurality of non-volatile memories being electrically connected to a buffer chip, and the memory controller being electrically connected to the buffer chip and configured to transmit a reference clock signal used in compensation of a data signal, the operating method comprising:
An interface circuit of a memory system, the interface circuit comprising:
Dependencies are inferred from the claim text.