Tunable homojunction field effect device-based artificial synapse circuit and implementation method thereof

A tunable homojunction field effect device-based artificial synapse circuit, wherein the circuit comprises a first tunable homojunction field effect device M1, a second tunable homojunction field effect device M2, a third tunable homojunction field effect device M3, and a capacitor C;

• the source S2 of M2 is connected to the gate electrode G3A of M3 close to the source, which serves as a first input terminal and is used to input a presynaptic pulse, the source S3 of M3 is connected to the gate electrode G2A of M2 close to the source, which serves as a second input terminal and is used to input a postsynaptic pulse;
• the drain D2 of M2 is connected to the gate electrode G2B close to the drain D2 and the gate electrode G1A of M1 close to the source S1, the drain D3 of M3 is connected to the gate electrode G3B close to the drain D3 and the gate electrode G1B of M1 close to the drain D1;
• the capacitor C is connected between the two gate electrodes G1A and G1B of M1, the source S1 and the drain D1 of M1 are respectively used to apply the source bias voltage V1 and the drain bias voltage V2;
• the structures of M1, M2, and M3 are the same, each comprising a substrate insulating material, a channel material layer, an insulating layer, and a metal electrode layer, the metal electrode layer comprises a drain electrode layer, a source electrode layer, a gate electrode layer A, and a gate electrode layer B, the gate electrode layer A and the gate electrode layer B are fabricated side by side on the substrate insulating material, and a gap is left between the gate electrode layer A and the gate electrode layer B to ensure electrical insulation therebetween, the insulating layer completely covers the gate electrode layer A and the gate electrode layer B, the drain electrode layer is placed on the left edge of the channel material layer above the gate electrode layer A, and the source electrode layer is placed on the right edge of the channel material layer above the gate electrode layer B, that is, the gate electrode layer A corresponds to the gate electrode G1B in M1, the gate electrode G2B in M2, and the gate electrode G3B in M3, and the gate electrode layer B corresponds to the gate electrode G1A in M1, the gate electrode G2A in M2, and the gate electrode G3A in M3.