Input/output panel, input/output device, and semiconductor device

An input/output device comprising:

• a touch sensor comprising:
• a first electrode over a substrate;
• and
• a second electrode under the substrate;
• a liquid crystal element under the substrate, the liquid crystal element comprising:
• a third electrode;
• a fourth electrode;
• and
• a liquid crystal material;
• a fifth electrode;
• and
• an insulating layer under the third electrode and the fourth electrode,
• wherein a capacitor is formed between the first electrode and the second electrode,
• wherein the substrate and the liquid crystal material are located between the first electrode and the second electrode,
• wherein the second electrode is formed on a same layer and using a same material as the third electrode and the fourth electrode,
• wherein the second electrode, the third electrode, and the fourth electrode are spaced apart from each other,
• wherein the fifth electrode is a pixel electrode, and
• wherein the fifth electrode overlaps with the third electrode and the fourth electrode with the insulating layer sandwiched therebetween.

An input/output device comprising:

• a touch sensor comprising:
• a first electrode over a substrate;
• and
• a second electrode under the substrate;
• a liquid crystal element under the substrate, the liquid crystal element comprising:
• a third electrode;
• a fourth electrode;
• and
• a liquid crystal material;
• a fifth electrode;
• and
• an insulating film under the second electrode, the third electrode, and the fourth electrode,
• wherein a capacitor is formed between the first electrode and the second electrode,
• wherein the substrate and the liquid crystal element are located between the first electrode and the fifth electrode,
• wherein the second electrode is formed on a same layer and using a same material as the third electrode and the fourth electrode,
• wherein the third electrode is a pixel electrode electrically connected to one of a source electrode or a drain electrode of a transistor,
• wherein the fifth electrode is formed using a same material as a semiconductor layer of the transistor, and
• wherein the insulating film is over and in contact with the transistor and the fifth electrode.