Device and method for generating a temperature-independent reference voltage

A semiconductor device comprising:

• a first temperature-dependent voltage generator configured to receive a first current and a second current that is a mirror current of the first current, and to generate, based on the first and second currents, a voltage that increases with temperature, wherein a first transistor module in the first temperature-dependent voltage generator has a first source/drain terminal;
• a second temperature-dependent voltage generator configured to generate a voltage that decreases with temperature and including a second transistor module having a source/drain terminal and a gate terminal connected to each other and to the first source/drain terminal of the first transistor module;
• and
• a reference voltage node connected to the first temperature-dependent voltage generator and configured to provide a reference voltage substantially independent of temperature.

A method for generating a temperature-independent reference voltage, the method comprising:

• receiving, by a first temperature-dependent voltage node, a first current and a second current that is a mirror current of the first current;
• generating, based on the first and second currents, a first gate-to-source voltage substantially equal to a difference between a gate-to-source voltage of a first transistor module and a gate-to-source voltage of a second transistor module at the first temperature-dependent voltage generator node, wherein each of the first and second transistor modules has a gate terminal and a first source/drain terminal connected to each other at the first temperature-dependent voltage generator node;
• generating, by a third transistor module, a second gate-to-source voltage;
• and
• providing, at a reference voltage node, a temperature-independent reference voltage substantially equal to a sum of the first and second gate-to-source voltages.