Extreme ultraviolet light generation system and electronic device manufacturing method

An electronic device manufacturing method, comprising:

• generating EUV light using an extreme ultraviolet light generation system;
• and
• outputting the EUV light to an exposure apparatus and exposing a photosensitive substrate to the EUV light in the exposure apparatus to manufacture an electronic device,
• the extreme ultraviolet light generation system including:
• a chamber including a first region;
• a target supply unit configured to supply a target to the first region;
• a laser device configured to output pulse laser light;
• an optical system including an optical element configured to guide the pulse laser light to the first region;
• an irradiation position adjustment mechanism configured to adjust a laser irradiation position with respect to the target in a plane being perpendicular to an optical path axis of the pulse laser light entering the first region and intersecting the first region by changing a position or posture of the optical element;
• an EUV light concentrating mirror configured to reflect the EUV light radiated from the first region and concentrate the EUV light to a second region, and arranged such that the pulse laser light passes outside the EUV light concentrating mirror and is guided to the first region;
• a plurality of EUV sensors configured to measure radiation energies of the EUV light radiated from the first region in mutually different radiation directions, the geometric centroid of the EUV sensors located at a position away from the optical axis in a direction toward the EUV light concentrating mirror;
• and
• a processor configured to control the irradiation position adjustment mechanism as setting a target irradiation position of the pulse laser light based on the radiation energies measured by the EUV sensors.

An electronic device manufacturing method, comprising:

• inspecting a defect of a mask by irradiating the mask with EUV light generated by an extreme ultraviolet light generation system;
• selecting a mask using a result of the inspection;
• and
• exposing and transferring a pattern formed on the selected mask onto a photosensitive substrate,
• the extreme ultraviolet light generation system including:
• a chamber including a first region;
• a target supply unit configured to supply a target to the first region;
• a laser device configured to output pulse laser light;
• an optical system including an optical element configured to guide the pulse laser light to the first region;
• an irradiation position adjustment mechanism configured to adjust a laser irradiation position with respect to the target in a plane being perpendicular to an optical path axis of the pulse laser light entering the first region and intersecting the first region by changing a position or posture of the optical element;
• an EUV light concentrating mirror configured to reflect the EUV light radiated from the first region and concentrate the EUV light to a second region, and arranged such that the pulse laser light passes outside the EUV light concentrating mirror and is guided to the first region;
• a plurality of EUV sensors configured to measure radiation energies of the EUV light radiated from the first region in mutually different radiation directions, the geometric centroid of the EUV sensors located at a position away from the optical axis in a direction toward the EUV light concentrating mirror;
• and
• a processor configured to control the irradiation position adjustment mechanism as setting a target irradiation position of the pulse laser light based on the radiation energies measured by the EUV sensors.