Pulsed laser device comprising a hybrid laser source with active optical triggering
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsBenoit Charbonnier, Keshia Mekemeza Ona
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Abstract
A pulsed laser device including: a III-V-on-silicon type hybrid pulsed laser source, including a gain section and a saturable absorber section which rest on a photonic substrate, and a longitudinal waveguide located in the photonic substrate; a control optical device including an optical pulse emitter source and a lateral waveguide located in the photonic substrate; the waveguides being sized so that the confinement factor Γlae/SA, Γlai/G in the quantum wells of the corresponding section of the optical mode of the lateral waveguide is higher than the confinement factor IL/ms, in the quantum wells of the semiconductor medium, of the optical mode of the longitudinal waveguide.
Claims15
A pulsed laser device, including:
- a III-V-on-silicon type hybrid pulsed laser source, including:
- a semiconductor medium including quantum wells, made based on a III-V compound, located in an optical cavity defining a longitudinal axis, and including at least one gain section and at least one saturable absorber section where the quantum wells are coplanar;
- a photonic substrate, made based on silicon, on which the semiconductor medium rests, and in which a longitudinal waveguide is located, the longitudinal waveguide:
- being involved in defining the optical cavity, and being optically coupled to the semiconductor medium along the longitudinal axis,
- having a width IL/ms and a vertical spacing dL/ms with respect to the semiconductor medium, in a coupling area zcL/ms with the semiconductor medium, predefined so that the optical mode propagating in the longitudinal waveguide has a confinement factor ΓL/ms in the quantum wells of the semiconductor medium;
- at least one control optical device, including:
- at least one emitter source configured to emit at least one control optical pulse with a predefined intensity;
- at least one lateral waveguide,
- located in the photonic substrate,
- optically coupled to the saturable absorber section or to the gain section to transmit the control optical pulse, in an inclined manner with respect to the longitudinal axis to avoid an optical coupling with the optical cavity, and
- having a width as well as a vertical spacing with respect to the semiconductor medium, in a coupling area with said corresponding section, predefined so that the optical mode propagating in the lateral waveguide has a confinement factor in the quantum wells of said corresponding section higher than ΓL/ms.
Dependencies are inferred from the claim text.