Semiconductor device with waveguide structure and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Li Lo, Huan-Chieh Chen, Yao-Wen Chang, Chih-Ming Chen
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Abstract
A method for manufacturing a semiconductor device includes: forming a first waveguide structure and a second waveguide structure on a substrate in which the first waveguide structure and the second waveguide structure is spaced apart from each other by a recess; conformally forming an un-doped dielectric layer to cover the first and second waveguide structures and to form a gap between two corresponding portions of the un-doped dielectric layer laterally covering the first waveguide structure and the second waveguide structure, respectively; and forming a doped filling layer to fill the gap.
Claims20
A method for manufacturing a semiconductor device comprising:
- forming a first waveguide structure and a second waveguide structure on a substrate, the first waveguide structure and the second waveguide structure being spaced apart from each other by a recess;
- conformally forming an un-doped dielectric layer to cover the first waveguide structure and the second waveguide structure and to form a gap between two corresponding portions of the un-doped dielectric layer laterally covering the first waveguide structure and the second waveguide structure, respectively;
- and
- forming a doped filling layer to fill the gap,
- wherein the recess has a width which decreases gradually and then increases gradually along a depth direction from an upper end toward a lower end of the recess, such that a smallest width (D) of the recess is formed in a middle portion of the recess.
A method for manufacturing a semiconductor device comprising:
- forming a waveguide-forming material layer on a substrate;
- patterning the waveguide-forming material layer to simultaneously form a first waveguide structure and a second waveguide structure on the substrate, the first waveguide structure and the second waveguide structure being spaced apart from each other by a recess;
- conformally forming an un-doped dielectric layer to cover the first waveguide structure and the second waveguide structure, the un-doped dielectric layer including a lower portion disposed on the substrate, two upper portions respectively disposed on the first waveguide structure and the second waveguide structure, and two interconnecting portions, each of which interconnects the lower portion and a corresponding one of the two upper portions and laterally covers a corresponding one of the first waveguide structure and the second waveguide structure so as to form a gap between the two interconnecting portions;
- forming a doped filling layer to fill the gap;
- and
- removing an upper portion of the doped filling layer and the two upper portions of the un-doped dielectric layer over the first waveguide structure and the second waveguide structure.
A semiconductor device comprising:
- a substrate;
- a first waveguide structure and a second waveguide structure disposed on the substrate;
- and
- a spacer disposed on the substrate to separate the first waveguide structure from the second waveguide structure and including:
- a doped dielectric body disposed between the first waveguide structure and the second waveguide structure, and
- an un-doped dielectric layer disposed to separate the doped dielectric body from the first waveguide structure and the second waveguide structure,
- wherein the spacer directly interfaces the first waveguide structure and the second waveguide structure.
Dependencies are inferred from the claim text.