Controlling etch angles by substrate rotation in angled etch tools
AssigneeApplied Materials, Inc.
InventorsRutger Meyer Timmerman Thijssen, Morgan Evans, Joseph C. Olson
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AssigneeApplied Materials, Inc.
InventorsRutger Meyer Timmerman Thijssen, Morgan Evans, Joseph C. Olson
Estimating the term…
Embodiments described herein relate to methods of forming gratings with different slant angles on a substrate and forming gratings with different slant angles on successive substrates using angled etch systems. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ϑ relative to a surface normal of the substrates and form gratings in the grating material. The substrates are rotated about an axis of the platen resulting in rotation angles φ between the ion beam and a surface normal of the gratings. The gratings have slant angles ϑ relative to the surface normal of the substrates. The rotation angles φ selected by an equation φ=cos−1 (tan(ϑ)/tan(ϑ)).
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Dependencies are inferred from the claim text.