Monolithic humidity sensor devices and methods of manufacture
AssigneeTexas Instruments Incorporated
InventorsRicky Alan Jackson, Wai Lee
Life of this patent
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Abstract
Monolithic humidity sensor devices, and methods of manufacture. The devices include circuitry on or over a silicon substrate. A primary passivation barrier is formed over the circuitry with conductive vias therethrough; a capacitor, comprising metal fingers with spaces therebetween, is formed above said primary passivation barrier and electrically coupled by the conductive vias to the circuitry. A secondary passivation barrier is formed over the capacitor. A hygroscopic material layer is formed over the secondary passivation barrier, wherein the capacitor is operable to exhibit a capacitance value responsive to moisture present in the hygroscopic material layer and the circuitry is operable to generate a signal responsive to said capacitance value.
Claims16
An integrated circuit, comprising:
- circuitry on or over a semiconductor substrate, the circuitry including top-level metal interconnects;
- a passivation overcoat (PO) layer over the top-level metal interconnects;
- conductive vias through the PO layer connected to the top-level metal interconnects;
- a humidity sensing element over the PO layer, including a first terminal connected to a first conductive via and a second terminal connected to a second conductive via;
- and,
- a hygroscopic material layer between the first and second terminals.
An integrated circuit, comprising:
- a circuitry layer over a semiconductor substrate, the circuitry layer including metal interconnects;
- a passivation layer over the circuitry layer;
- a moisture sensing element over the passivation layer, the moisture sensing element including first and second electrodes;
- and
- one or more vertical interconnections that connect at least one of the first and second electrodes to the circuitry layer through the passivation layer.
Dependencies are inferred from the claim text.