US 12,668,867 B2 · Ion beam deposition of ruthenium thin films

Abstract

Methods for forming a low resistivity ruthenium (Ru) thin film that include depositing ruthenium onto a substrate via ion beam deposition with assist ion beam in a process chamber having reactive and noble gas species therein. The substrate is at at least 250° C. A resulting thin ruthenium film has a thickness of no more than 30 nm, a resistivity less than 12 μ·cm and a crystalline structure comprising grains having a (0001) orientation. The resistivity will differ at different thickness; for example, less than 9 μΩ-cm for films of 50 nm and thicker, less than 9.5 μΩ-cm for films of 35 nm and thicker, less than 11 μΩ-cm for films of 20 nm and thicker, less than 15 μΩ-cm for films of 10 nm and thicker or less than 20 μΩ-cm for films of 2 nm and thicker. The grains have a mean grain size at least three times the film thickness.

Claims26

Dependent claims

A method of forming a ruthenium film having a thickness at least 10 nm, a resistivity less than 15 μΩ-cm, and a polycrystalline structure comprising grains having a (0001) orientation, the method comprising:

depositing a ruthenium film from a ruthenium target onto a substrate via a deposition ion beam from a deposition ion source in a process chamber in the presence of one or both of a first reactive gas species and a first noble gas species, the substrate at a temperature of at least 250° C.;
and
simultaneously bombarding at least some of the deposited ruthenium in the process chamber with an assist ion beam from an assist ion source in the presence of one or both of a second reactive gas species and a second noble gas species,
wherein any of the first reactive gas species, the second reactive gas species, the first noble gas species, and the second noble gas species are introduced to the process chamber by any one or more of the deposition ion source, the assist ion source, a deposition ion source neutralizer, and an assist ion source neutralizer.

1 more element

Dependencies are inferred from the claim text.

Ion beam deposition of ruthenium thin films

Life of this patent

Ion beam deposition of ruthenium thin films

Life of this patent

Abstract

Claims26