Oxhalide precursors
AssigneeEntegris, Inc.
InventorsDavid M. Ermert, Robert L. Wright, Jr., Thomas H. Baum, Bryan C. Hendrix
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Abstract
The invention provides a process for preparing molybdenum and tungsten oxyhalide compounds which are useful in the deposition of molybdenum and tungsten containing films on various surfaces of microelectronic devices. In the process of the invention, a molybdenum or tungsten trioxide is heated in either a solid state medium or in a melt-phase reaction comprising a eutectic blend comprising alkaline and/or alkaline earth metal salts. The molybdenum or tungsten oxyhalides thus formed may be isolated as a vapor and crystallized to provide highly pure precursor compounds such as MoO2Cl2.
Claims13
A process for preparing compounds of the formula MOyXz, wherein M is chosen from molybdenum and tungsten, and X is chosen from chloro, fluoro, bromo, and iodo, y is 1 or 2, and z is 2 or 4, which comprises contacting a compound of the formula
- with at least one compound of the formula A-X, wherein A is chosen from elements of Group 1, Group 2, transitions metals, and main-group elements, at a temperature of about 200° to about 900° C., wherein the contacting produces multiple compounds of the formula MOyXz and the contacting is conducted under a regime of fractional sublimation to separate MO2Z2 and MOZ4 into pure products.
Dependencies are inferred from the claim text.