Microelectromechanical systems device having improved signal distortion
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorTing-Jung Chen
Life of this patent
Estimating the term…
Abstract
Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device comprises a substrate. A cavity is disposed in the substrate. A microelectromechanical system (MEMS) layer is disposed over the substrate. The MEMS layer comprises a movable diaphragm disposed over the cavity. The movable diaphragm comprises a central region and a peripheral region. The movable diaphragm is flat in the central region of the movable diaphragm. The movable diaphragm is corrugated in the peripheral region of the movable diaphragm.
Claims20
A semiconductor device, comprising:
- a substrate having first and second inner sidewalls that define outer edges of a cavity when viewed in a cross-section of the semiconductor device;
- a movable diaphragm suspended over the cavity when viewed in the cross-section, the movable diaphragm including a central region and first and second peripheral regions that couple the central region to the respective first and second inner sidewalls of the substrate,
- wherein the first and second peripheral regions each include an upper surface with multiple grooves and multiple ridges when viewed in the cross-section,
- wherein the central region has a uniform thickness defined between a flat upper surface of the central region and a flat lower surface of the central region when viewed in cross section, and wherein outermost edges of the central region have the uniform thickness, and wherein a lowermost point of a groove in the upper surface of the peripheral region is arranged on a plane that is parallel to an upper surface of the substrate and that traverses the central region between the flat upper surface and the flat lower surface.
A semiconductor device, comprising:
- a substrate;
- a cavity disposed in the substrate;
- a microelectromechanical system (MEMS) layer disposed over the substrate, wherein:
- the MEMS layer comprises a movable diaphragm disposed over the cavity;
- the movable diaphragm has a flat portion and a corrugated portion;
- and
- the corrugated portion of the movable diaphragm laterally surrounds the flat portion of the movable diaphragm and comprises grooves and ridges that have upwardly facing surfaces and comprises inverted grooves and inverted ridges that have downwardly facing surfaces, wherein peaks of the ridges are flat surfaces that are co-planar with a top surface of the flat portion and the peaks of the inverted grooves are flat surfaces that are co-planar with a surface of the substrate.
A semiconductor device, comprising:
- a substrate;
- a cavity disposed in the substrate;
- a microelectromechanical system (MEMS) layer disposed over the substrate, wherein:
- the MEMS layer comprises a movable diaphragm disposed over the cavity;
- the movable diaphragm comprises a central region and a peripheral region;
- the movable diaphragm has a flat surface in the central region of the movable diaphragm;
- the movable diaphragm is corrugated in the peripheral region of the movable diaphragm;
- wherein the peripheral region has a top side and a bottom side that each comprise multiple grooves and multiple ridges, wherein the grooves and the ridges each comprise a flat surface that is parallel to the flat surface of the movable diaphragm;
- an actuation device disposed over the MEMS layer, wherein:
- the actuation device is configured to displace the movable diaphragm in response to an electrical signal;
- and
- wherein the peripheral region has a thickness defined between a bottommost point of a groove on its upper surface and a bottommost point of an inverted ridge on its lower surface, wherein the flat lower surface of the central region lies on a plane that is substantially parallel to an upper surface of the substrate that traverses the thickness of the peripheral region between those two bottommost points.
Dependencies are inferred from the claim text.