Semiconductor memory device
AssigneeKioxia Corporation
InventorsTomoya Sanuki, Hiroshi Maejima, Tetsuaki Utsumi
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Abstract
According to one embodiment, a semiconductor memory device includes a memory cell, a first voltage generator and a second voltage generator. The memory cell is provided above a substrate. The first voltage generator is provided between the substrate and the memory cell. The first voltage generator is configured to generate a first voltage to be supplied to the memory cell. The second voltage generator is provided between the substrate and the memory cell. The second voltage generator is configured to generate the first voltage and have a circuit configuration equivalent to the first voltage generator.
Claims13
A semiconductor memory device comprising:
- a memory cell array above a substrate;
- a first circuit on a portion of the substrate beneath the memory cell array;
- and
- a pattern for photolithography provided on a central side of the substrate compared to the first circuit,
- wherein the memory cell array includes a plurality of first conductive layers stacked in a first direction above the substrate, and a pillar penetrating through the first conductive layers in the first direction.
A semiconductor memory device comprising:
- a memory cell array;
- and
- a pad region provided adjacent to the memory cell array, and including a plurality of first pads and a pattern for photolithography, wherein
- the plurality of first pads are for connecting a memory controller provided outside of the semiconductor memory device, and
- the pattern includes first patterns arranged at portions corresponding to sides of a rectangle, and second patterns arranged outside of the first patterns with predetermined spaces therebetween.
Dependencies are inferred from the claim text.