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US 12,667,000 B2Granted
Semiconductor device that uses bonding layer to join semiconductor substrates together
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Fa Chen, Chen-Hua Yu
Life of this patent
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Abstract
Semiconductor devices are provided in which a first semiconductor device is bonded to a second semiconductor device. The bonding may occur at a gate level, a gate contact level, a first metallization layer, a middle metallization layer, or a top metallization layer of either the first semiconductor device or the second semiconductor device.
Claims20
A semiconductor device comprising:
- a first interconnection structure adjacent to a first semiconductor substrate, wherein the first interconnection structure is in physical contact with a first gate contact, the first gate contact having straight sidewalls from a top of the first gate contact to a bottom of the first gate contact;
- a first bonding layer in physical contact with the first interconnection structure, wherein the first bonding layer has a first bonding interface on a first side of the first bonding layer;
- a second interconnection structure adjacent to a second semiconductor substrate, wherein the second interconnection structure is bonded to the first bonding layer at the first bonding layer;
- through vias extending through the second semiconductor substrate, wherein each of the through vias that extends through the second semiconductor substrate makes physical contact with a conductive portion of the second interconnection structure;
- an encapsulant surrounding the second semiconductor substrate and a third semiconductor substrate;
- through encapsulant vias extending from a first side of the encapsulant to a second side of the encapsulant, the through encapsulant vias having a first height as large as a maximum height of the encapsulant;
- and
- a third interconnection structure extending fully over the second semiconductor substrate.
5 more elements
A semiconductor device comprising:
- a first bonding dielectric layer;
- a first conductive bonding material embedded through the first bonding dielectric layer and in physical contact with a gate electrode contact, wherein the gate electrode contact has straight sidewalls from a top of the gate electrode contact to a bottom of the gate electrode contact;
- a conductive material of a first semiconductor die bonded directly to the first conductive bonding material;
- through vias extending through a semiconductor substrate of the first semiconductor die, wherein the through vias are all of the conductive vias extending through the semiconductor substrate, the through vias having a first height less than a second height of the first semiconductor die;
- a second bonding dielectric layer bonded to the first bonding dielectric layer;
- an encapsulant surrounding the first semiconductor die, the encapsulant having a first maximum height;
- a second semiconductor die encapsulated within the encapsulant;
- and
- second through vias extending through the encapsulant, the second through vias having the first maximum height.
6 more elements
A semiconductor device comprising:
- a first bonding dielectric layer adjacent to a first semiconductor substrate;
- a first bonding conductor embedded within the first bonding dielectric layer and in physical contact with a first gate electrode contact;
- a second bonding dielectric layer adjacent to a second semiconductor substrate different from the first semiconductor substrate, wherein the first semiconductor substrate has a first width extending from a first side of the first semiconductor substrate to a second side of the first semiconductor substrate opposite the first side of the first semiconductor substrate, wherein the second semiconductor substrate has a second width extending from a first side of the second semiconductor substrate to a second side of the second semiconductor substrate opposite the first side of the second semiconductor substrate, and wherein the first width is different than the second width;
- through vias extending through the second semiconductor substrate to make physical contact with a second metallization layer in electrical contact with the second bonding dielectric layer, wherein the through vias are all of the conductive vias extending through the second semiconductor substrate;
- a second bonding conductor embedded within the second bonding dielectric layer, the second bonding dielectric layer bonded to the first bonding dielectric layer;
- a third semiconductor substrate encapsulated with the second semiconductor substrate by an encapsulant;
- and
- at least one through encapsulant via extending through the encapsulant, the at least one through encapsulant via having a height at least as large as a largest height of the encapsulant.
5 more elements
Dependencies are inferred from the claim text.