Semiconductor device, method of manufacturing semiconductor device, and method of disposing alignment mark

A method of manufacturing a semiconductor device, the method comprising:

• forming a first alignment mark in a first region and a plurality of first dummy pads in a second region different from the first region on a first surface of a first chip;
• forming a second alignment mark corresponding to the first alignment mark and a plurality of second dummy pads in a region different from the second alignment mark on a second surface of a second chip;
• bonding the first surface of the first chip and the second surface of the second chip together based on the first alignment mark and the second alignment mark;
• and forming the first alignment mark and the plurality of first dummy pads such that a coverage of the first alignment mark in the first region is substantially the same as a coverage of the first dummy pads in the second region.

A method of disposing an alignment mark, the method comprising:

• forming a first recess portion in a first region of an insulating film of a first chip and forming a second recess portion in a second region of the insulating film;
• forming a conductor on the insulating film and inside the first recess portion and the second recess portion;
• and
• forming a plurality of first dummy pads in the first region and a first alignment mark in the second region by polishing the conductor until the insulating film is exposed;
• and
• forming the first recess portion and the second recess portion such that a coverage of the first alignment mark in the first region is substantially the same as a coverage of the first dummy pads in the second region.