High-frequency semiconductor package

A high-frequency semiconductor package comprising:

• a metal plate;
• a substrate provided on the metal plate and having an opening;
• a semiconductor chip provided on the metal plate in the opening and having an input pad and an output pad;
• an input feedthrough provided on the substrate and wire-connected to the input pad;
• an output feedthrough provided on the substrate, opposed to the input feedthrough with the opening interposed therebetween, and wire-connected to the output pad;
• a metal seal ring provided on the substrate and surrounding the opening, the input feedthrough and the output feedthrough;
• a through-hole extending through the substrate and electrically connecting the metal seal ring and the metal plate;
• a conductive cap bonded to the metal seal ring and covering a place above the semiconductor chip;
• and
• an isolation metal wire having both ends electrically connected to the metal plate and a loop coming into contact with a lower surface of the conductive cap,
• wherein the isolation metal wire constitutes an isolation wall partitioning an inner space, which is surrounded by the metal plate, the substrate, the metal seal ring, and the conductive cap, into a region including the input feedthrough and a region including the output feedthrough,
• a plurality of slits are provided parallel to one another in a lower surface of the conductive cap,
• each of the slits has a width larger than a wire diameter of the isolation metal wire, and
• the loop of the isolation metal wire is fitted within any one of the plurality of slits.

A high-frequency semiconductor package comprising:

• a metal plate;
• a substrate provided on the metal plate and having an opening;
• a semiconductor chip provided on the metal plate in the opening and having an input pad and an output pad;
• an input feedthrough provided on the substrate and wire-connected to the input pad;
• an output feedthrough provided on the substrate, opposed to the input feedthrough with the opening interposed therebetween, and wire-connected to the output pad;
• a metal seal ring provided on the substrate and surrounding the opening, the input feedthrough and the output feedthrough;
• a through-hole extending through the substrate and electrically connecting the metal seal ring and the metal plate;
• a conductive cap bonded to the metal seal ring and covering a place above the semiconductor chip;
• and
• an isolation metal wire having both ends electrically connected to the metal plate and a loop coming into contact with a lower surface of the conductive cap,
• wherein the isolation metal wire constitutes an isolation wall partitioning an inner space, which is surrounded by the metal plate, the substrate, the metal seal ring, and the conductive cap, into a region including the input feedthrough and a region including the output feedthrough,
• the semiconductor chip has multi-stage amplifiers, and
• the isolation metal wire partitions the inner space into a region including the amplifier of the last stage and a region including the amplifier of a stage preceding the last stage.

A high-frequency semiconductor package comprising:

• a metal plate;
• a substrate provided on the metal plate and having an opening;
• a semiconductor chip provided on the metal plate in the opening and having an input pad and an output pad;
• an input feedthrough provided on the substrate and wire-connected to the input pad;
• an output feedthrough provided on the substrate, opposed to the input feedthrough with the opening interposed therebetween, and wire-connected to the output pad;
• a metal seal ring provided on the substrate and surrounding the opening, the input feedthrough and the output feedthrough;
• a through-hole extending through the substrate and electrically connecting the metal seal ring and the metal plate;
• a conductive cap bonded to the metal seal ring and covering a place above the semiconductor chip;
• and
• an isolation metal wire having both ends electrically connected to the metal plate and a loop coming into contact with a lower surface of the conductive cap,
• wherein the isolation metal wire constitutes an isolation wall partitioning an inner space, which is surrounded by the metal plate, the substrate, the metal seal ring, and the conductive cap, into a region including the input feedthrough and a region including the output feedthrough, and
• the isolation metal wire includes metal wires arrayed in two rows in a staggered manner.