Metal-insulator-silicide capacitors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKaochao Chen, Chia-Cheng Ho, Chan-Yu Hung
Life of this patent
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Abstract
Some embodiments relate to an integrated circuit including a semiconductor substrate. A silicide structure is disposed over the semiconductor substrate in a cross-sectional view. A dielectric structure is in direct contact with an upper surface of the silicide structure in the cross-sectional view. A metal structure is in direct contact with an upper surface of the dielectric layer in the cross-sectional view, such that the silicide structure and the metal structure establish a bottom electrode and a top electrode, respectively, which are spaced apart from one another by the dielectric structure to establish a metal-insulator-silicide capacitor over the semiconductor substrate.
Claims20
An integrated circuit (IC), comprising:
- a semiconductor substrate;
- a channel region having a first conductivity disposed in the semiconductor substrate;
- a gate feature extending over the channel region;
- a gate dielectric separating the gate feature from the channel region;
- a source region having a second conductivity disposed in the semiconductor substrate to a first side of the gate feature, the second conductivity opposite the first conductivity;
- a drain region having the second conductivity disposed in the semiconductor substrate to a second side of the gate feature, the second side being opposite the first side;
- a silicide structure disposed over the semiconductor substrate in a cross-sectional view, wherein the silicide structure directly contacts an upper surface of the source region or the drain region;
- a dielectric structure in direct contact with an upper surface of the silicide structure in the cross-sectional view;
- and
- a metal structure in direct contact with an upper surface of the dielectric structure in the cross-sectional view, such that the silicide structure, the dielectric structure, and the metal structure establish a metal-insulator-silicide capacitor over the semiconductor substrate.
An integrated circuit (IC), comprising:
- a semiconductor substrate;
- a gate electrode extending over the semiconductor substrate;
- a first silicide structure disposed on the gate electrode;
- a first dielectric structure disposed directly on the first silicide structure;
- and
- a first conductive structure in direct contact with an upper surface of the first dielectric structure, such that the first silicide structure and the first conductive structure establish a first bottom electrode and a first top electrode, respectively, which are spaced apart from one another by the first dielectric structure to establish a first conductor-insulator-silicide capacitor over the gate electrode;
- a second silicide structure disposed on the semiconductor substrate and spaced laterally apart from the gate electrode;
- a second dielectric structure disposed directly on the second silicide structure;
- a second conductive structure in direct contact with an upper surface of the second dielectric structure, such that the second silicide structure and the second conductive structure establish a second bottom electrode and a second top electrode, respectively, which are spaced apart from one another by the second dielectric structure to establish a second conductor-insulator-silicide capacitor,
- wherein the first dielectric structure and the second dielectric structure are portions of a single dielectric layer extending continuously from over the first silicide structure to over the second silicide structure.
A method, comprising:
- forming a silicide layer over a substrate, the silicide layer including a first silicide structure and a second silicide structure;
- forming a capacitor dielectric layer over the silicide layer;
- forming a metal layer over the capacitor dielectric layer;
- patterning the metal layer to form a first metal structure over the first silicide structure and a second metal structure over the second silicide structure;
- forming an inter-layer dielectric over the first and second metal structures;
- and
- forming first and second contacts to the first and second metal structures and third and fourth contacts to the first and second silicide structures.
Dependencies are inferred from the claim text.