Processing apparatus using laser, method of laser lift-off and method of manufacturing semiconductor device
AssigneeKioxia Corporation
InventorsTakuro Okubo, Hidekazu Hayashi
Life of this patent
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Abstract
A processing apparatus using laser according to an embodiment includes a stage configured to hold a substrate and rotate, and a laser irradiation apparatus capable of moving in a radial direction of the rotation. The laser irradiation apparatus includes a control unit configured to control an output of an infrared pulsed laser so that L1/L2 satisfies 1.2 or more and 10 or less when a distance between laser spots adjacent to each other in a rotation direction of the stage is L1 and a distance between laser spots adjacent to each other in the radial direction of the rotation is L2.
Claims13
A processing apparatus using a laser, the processor apparatus comprising:
- a stage configured to hold a substrate and rotate;
- a laser irradiation apparatus movable in a radial direction of rotation of the stage;
- and
- a moving mechanism configured to move the laser irradiation apparatus in the radial direction,
- wherein the laser irradiation apparatus includes a control unit configured to control an output of an infrared pulsed laser so that the following condition is satisfied:
- 1.2≤L1/L2≤10
- where L1 is a distance between laser spots adjacent to each other in a rotation direction of the stage, and L2 is a distance between laser spots adjacent to each other in the radial direction.
A method of laser lift-off, the method comprising:
- arranging a bonded substrate on a stage, the bonded substrate being formed by bonding a first substrate and a second substrate via a laser absorption layer;
- rotating the stage;
- and
- moving the laser irradiation apparatus in a radial direction of rotation of the stage,
- wherein the laser irradiation apparatus is configured to irradiate the laser absorption layer with an infrared pulsed laser by controlling an output so that the following condition is satisfied:
- 1.2≤L1/L2≤10
- where L1 is a distance between laser spots adjacent to each other in the rotation direction of the stage, and L2 is a distance between laser spots adjacent to each other in the radial direction, and
- wherein L1 is greater than a diameter of each of the laser spots adjacent to each other in the rotation direction of the stage, and L2 is greater than a diameter of each of the laser spots adjacent to each other in the radial direction.
A method of manufacturing a semiconductor device, the method comprising:
- arranging a bonded substrate on a stage, the bonded substrate being formed by bonding a first substrate and a second substrate via a laser absorption layer;
- rotating the stage;
- moving a laser irradiation apparatus in a radial direction of rotation of the stage, the laser irradiation apparatus being configured to irradiate the laser absorption layer with an infrared pulsed laser by controlling an output so that the following condition is satisfied:
- 1.2≤L1/L2≤10
- where L1 is a distance between laser spots adjacent to each other in the rotation direction of the stage, and L2 is a distance between laser spots adjacent to each other in the radial direction;
- and
- peeling off the second substrate from the first substrate,
- wherein L1 is greater than a diameter of each of the laser spots adjacent to each other in the rotation direction of the stage, and L2 is greater than a diameter of each of the laser spots adjacent to each other in the radial direction.
Dependencies are inferred from the claim text.