Method for forming semiconductor devices using a glass structure attached to a wide band-gap semiconductor wafer

A method for forming semiconductor devices, the method comprising:

• attaching a glass structure to a wide band-gap semiconductor wafer comprising a plurality of semiconductor devices;
• forming at least one opening extending through the glass structure from a first outer surface of the glass structure to a second, opposite outer surface of the glass structure;
• forming at least one pad structure by at least partially filling the at least one opening with electrically conductive material, such that a first end of the at least one pad structure is electrically connected to at least one doping region of a semiconductor substrate of the wide band-gap semiconductor wafer and a second, opposite end of the pad structure is exposed through the second, opposite outer surface of the glass structure;
• forming at least one trench structure extending into the wide band-gap semiconductor wafer between neighboring semiconductor devices of the plurality of semiconductor devices;
• and
• separating the wide band-gap semiconductor wafer into the plurality of semiconductor devices,
• wherein the separating comprises cutting the wide band-gap semiconductor wafer and the glass structure along the at least one trench structure, and at least partially grinding a backside of the wide band-gap semiconductor wafer.

A method for forming semiconductor devices, the method comprising:

• attaching a glass structure to a wide band-gap semiconductor wafer comprising a plurality of semiconductor devices;
• forming at least one pad structure electrically connected to at least one doping region of a semiconductor substrate of the wide band-gap semiconductor wafer, by forming electrically conductive material within at least one opening extending through the glass structure;
• reducing a thickness of the wide band-gap semiconductor wafer after attaching the glass structure, and
• forming at least one trench structure extending partway but not completely through the wide band-gap semiconductor wafer between neighboring semiconductor devices of the plurality of semiconductor devices.