Methods for depositing gap-filling fluids and related systems and devices

A method of filling a gap comprising:

• introducing a substrate in a reaction chamber, the substrate being provided with a gap;
• depositing a gap filling fluid by executing a cyclical deposition process comprising a plurality of super cycles, wherein a super cycle comprises a deposition cycle and a curing cycle,
• wherein the deposition cycle comprises a precursor pulse and a plasma pulse,
• wherein a curing cycle comprises curing the gap filling fluid, wherein curing the gap filled fluid comprises generating a plasma from a gas consisting of He,
• wherein the precursor pulse comprises introducing a silicon precursor into the reaction chamber, the silicon precursor comprising silicon and a halogen,
• wherein the plasma pulse comprises generating a plasma in the reaction chamber and introducing a reactant into the reaction chamber, wherein the reactant comprises a noble gas,
• whereby the silicon precursor and the reactant react in the presence of the plasma to form a gap filling fluid that at least partially fills the gap, the gap filling fluid comprising silicon and hydrogen;
• and
• wherein the precursor pulse and the plasma pulse are separated by an intra-cycle purge, and
• wherein the step of curing the gap filling fluid comprises generating a direct micro pulsed plasma with a flow rate of at least 10.0 slm of the gas consisting of He, thereby minimizing redeposition of volatile by-products released during the formation of the gap filling fluid, wherein a RF on time of a pulse of the micro pulsed plasma lasts from at least 1 ps to at most 250 ms and a RF off time of the pulse of the micro pulsed plasma lasts from at least 1.0 μs to at most 500 ms, and wherein an RF power during generating a direct micro pulsed plasma is 200 W.