US 12,666,765 B2Granted

Light-emitting element

AssigneeAUO Corporation

InventorsYinYu Chen, Yi-Hong Chen, Chia-An Lee, Yu-Hsin Huang, Kuan-Heng Lin

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Abstract

A light-emitting element includes a first type semiconductor layer, a second type semiconductor layer, a light-emitting layer, a first electrode, a second electrode, and a multi-layer film. The second type semiconductor layer overlaps the first type semiconductor layer. The light-emitting layer is located between the first type semiconductor layer and the second type semiconductor layer. The first electrode is electrically connected to the first type semiconductor layer and is located on a side of the first type semiconductor layer close to the second type semiconductor layer. The second electrode is electrically connected to the second type semiconductor layer and is located on a side of the second type semiconductor layer facing away from the first type semiconductor layer. The multi-layer film is located on a surface of the first type semiconductor layer facing away from the second type semiconductor layer and has a protrusion portion. The protrusion portion protrudes from a side surface of the first type semiconductor layer. A light-emitting device includes the light-emitting element.

Claims4

Dependent claims

A light-emitting element, comprising:

a first type semiconductor layer;
a second type semiconductor layer, overlapping the first type semiconductor layer;
a light-emitting layer, located between the first type semiconductor layer and the second type semiconductor layer;
a first electrode, electrically connected to the first type semiconductor layer, and located on a side of the first type semiconductor layer close to the second type semiconductor layer;
a second electrode, electrically connected to the second type semiconductor layer, and located on a side of the second type semiconductor layer facing away from the first type semiconductor layer;
an anti-reflective layer, located on a surface of the first type semiconductor layer facing away from the second type semiconductor layer, and having a protrusion portion, wherein the protrusion portion protrudes from a side surface of the first type semiconductor layer;
and
a carrier plate, wherein the carrier plate is located on the side of the second type semiconductor layer facing away from the first type semiconductor layer, and the anti-reflective layer is connected to the carrier plate, so that the first type semiconductor layer, the second type semiconductor layer, the light-emitting layer, the first electrode, and the second electrode are suspended above the carrier plate by means of the anti-reflective layer.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/187,692Filed 22 Mar 2023
Priority: TW 11114885520 Dec 2022
Published: US 2024/0204144 A120 Jun 2024
Granted: 23 Jun 2026
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10H 20/84
Constructional details: coatings, e.g. passivation layers or antireflective coatings
H10H 20/018
Of bodies, e.g. forming semiconductor layers: bonding of wafers
H10H 20/82
Characterised by their shape, e.g. curved or truncated substrates: roughened surfaces, e.g. at the interface between epitaxial layers
H10W 90/00
Package configurations