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US 12,666,754 B2Granted
Method and optoelectronic structure providing polysilicon photonic devices with different optical properties in different regions
AssigneesMicron Technology, Inc., Massachusetts Institute of Technology
InventorsRoy Meade, Karan Mehta, Efraim Megged, Jason Orcutt, Milos Popovic, Rajeev Ram, Jeffrey Shainline, Zvi Sternberg, Vladimir Stojanovic, Ofer Tehar-Zahav
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Abstract
Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.
Claims17
An integrated structure comprising:
- a substrate;
- an optical isolation region formed in the substrate;
- a photonic device over and vertically aligned with the optical isolation region, the photonic device formed of a first polysilicon material;
- a transistor having a gate that is formed of a second polysilicon material different from the first polysilicon material and that has a same thickness as the photonic device.
1 more element
An integrated structure comprising:
- a substrate;
- an optical isolation region formed in the substrate;
- a photonic device over and vertically aligned with the optical isolation region, the photonic device formed of a first polysilicon material;
- and
- a transistor having a gate that is formed of a second polysilicon material different from the first polysilicon material and that has a same thickness as the photonic device, wherein the first polysilicon material has a lower attenuation than the second polysilicon material.
2 more elements
Dependencies are inferred from the claim text.