Film bulk acoustic wave resonators and filters with peripheral film frame
AssigneeSkyworks Solutions, Inc.
InventorsGong Bin Tang, Ousmane I Barry, Hiroyuki Nakamura
Life of this patent
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Abstract
A film bulk acoustic wave resonator (FBAR) is disclosed with recessed and raised frame portions in the piezoelectric film. The FBAR can include a substrate, the piezoelectric film supported to oscillate in a direction opposite to a main surface of the substrate, and a pair of top and bottom electrodes formed respectively on top and bottom surfaces of the film. The recessed frame portion and the raised frame portion can be formed in the film to extend adjacent to each other along a periphery of an active region of the film oscillating during an operation of the film on a top surface of the top electrode.
Claims23
A film bulk acoustic wave resonator comprising:
- a substrate;
- a piezoelectric film supported to oscillate above a main surface of the substrate;
- and
- a pair of top and bottom electrodes formed respectively on top and bottom surfaces of the film, a recessed frame portion and a raised frame portion formed in the film extending adjacent to each other along a periphery of an active area of the film, the active area oscillating during an operation of the film, the recessed frame portion being formed along an inner periphery of the raised frame portion.
A film bulk acoustic wave filter comprising:
- a plurality of film bulk acoustic wave resonators configured to filter a radio frequency signal, at least one of the plurality of film bulk acoustic wave resonators including a substrate, a piezoelectric film supported to oscillate above a main surface of the substrate, and a pair of top and bottom electrodes formed respectively on top and bottom surfaces of the film, a recessed frame portion and a raised frame portion formed in the film extending along a periphery of an active area of the film, the active area oscillating during an operation of the film, the recessed frame portion being formed along an inner periphery of the raised frame portion.
A film bulk acoustic wave filter assembly comprising:
- a first film bulk acoustic wave filter coupled to a common node;
- and
- a second film bulk acoustic wave filter coupled to the common node, at least one of the first film bulk acoustic wave filter and the second film bulk acoustic wave filter including a plurality of film bulk acoustic wave resonators to filter a radio frequency signal, at least one of the plurality of film bulk acoustic wave resonators including a substrate, a piezoelectric film supported to oscillate above to a main surface of the substrate, and a pair of top and bottom electrodes formed respectively on top and bottom surfaces of the film, a recessed frame portion and a raised frame portion formed in the film extending adjacent to each other along a periphery of an active area of the film, the active area oscillating during an operation of the film, the recessed frame portion being formed along an inner periphery of the raised frame portion.
A wireless communication device comprising:
- an antenna;
- and
- a multiplexer coupled to the antenna, the multiplexer including a plurality of filters coupled to a common node and arranged to filter a radio frequency signal, the plurality of filters including a film bulk acoustic wave filter, the film bulk acoustic wave filter including a plurality of film bulk acoustic wave resonators, at least one of the plurality of film bulk acoustic wave resonators including a substrate, a piezoelectric film supported to oscillate above a main surface of the substrate, and a pair of top and bottom electrodes formed respectively on top and bottom surfaces of the film, a recessed frame portion and a raised frame portion formed in the film extending adjacent to each other along a periphery of an active area of the film, the active area oscillating during an operation of the film, the recessed frame portion being formed along an inner periphery of the raised frame portion.
A bulk acoustic wave resonator comprising:
- a substrate;
- a piezoelectric layer on the substrate;
- and
- first and second electrodes on opposing sides of the piezoelectric layer, the first electrode including a recessed frame portion formed along a periphery of an active region of the bulk acoustic wave resonator, the second electrode being disposed opposite to the substrate via a cavity, the first electrode being configured to have a thickness of the recessed frame portion equal to a thickness of a portion other than the recessed frame portion, and the recessed frame portion being configured to correspond to a recessed portion formed in the piezoelectric layer.
Dependencies are inferred from the claim text.