Ion irradiation of microelectromechanical resonators
AssigneeThe United States of America as represented by the Secretary of the Air Force
InventorsHengky Chandrahalim, David Lynes
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Abstract
A method of enhancing an electromechanical coupling coefficient of a microelectromechanical (“MEMS”) device. The method includes applying, to a fully fabricated MEMS device, heavy particle ion radiation to the MEMS device at a fluence of at least 1×1014 cm−2. According to other embodiments of the present invention are directed to a bandpass filter comprising a plurality of MEMS devices fabricated in accordance with the methods provided. The MEMS of the plurality are electronically or mechanically coupled.
Claims11
A method of enhancing an electromechanical coupling coefficient of a microelectromechanical (“MEMS”) device, the method comprising:
- applying heavy particle ion radiation to the MEMS device at a fluence of at least 1×1014 cm−2 which can cause an increase in k2eff of at least 5%.
Dependencies are inferred from the claim text.