Member for semiconductor manufacturing apparatus
AssigneeNGK Insulators, Ltd.
InventorYusuke Ogiso
Life of this patent
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Abstract
A member for semiconductor manufacturing apparatus of the present invention includes an AlN ceramic substrate with a surface provided with projections for wafer placement. At least part of an area, provided with no projection, of the AlN ceramic substrate has a surface layer region from the surface to a predetermined depth, and a base material region below the surface layer region. The predetermined depth is 5 μm or less. The oxygen content rate of the surface layer region is higher than the oxygen content rate of the base material region.
Claims9
A member for semiconductor manufacturing apparatus, including an AlN ceramic substrate with a surface provided with projections for wafer placement,
- wherein at least part of an area, provided with no projection, of the AlN ceramic substrate has a surface layer region from the surface to a predetermined depth, and a base material region below the surface layer region, the predetermined depth is 5 μm or less, and an oxygen content rate of the surface layer region is higher than an oxygen content rate of the base material region, and
- wherein a nitrogen content rate of the surface layer region is lower than a nitrogen content rate of the base material region.
Dependencies are inferred from the claim text.