Method for producing optoelectronic devices

A method for manufacturing at least one first optoelectronic device operating at a first wavelength λ1 and a second optoelectronic device operating at a second wavelength λ2>λ1, the first optoelectronic device comprising a first stack along a direction z on a first substrate, the first stack comprising a first lower encapsulation layer of thickness e10 along the direction z and a plurality of first layers of thickness e1i (i=1 . . . n) along the direction z, and the second optoelectronic device comprising a second stack along the direction z on a second substrate, the second stack comprising a second lower encapsulation layer of thickness e20 along the direction z and a plurality of second layers of thickness e2i (i=1 . . . n) along the direction z, said second layers of thickness e2i having optical functions similar to those of the first layers of thickness e1i, the method comprising:

• forming the second stack on the second substrate by sizing the thicknesses e20 and e2i, i=1 . . . n, according to the second wavelength λ2,
• forming the first stack on the first substrate by sizing the thicknesses e10 and e1i according to:
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• performing at least one same technological step on the first and second stacks, including an etching of the first and second stacks along one same depth along z, so as to obtain the first and second optoelectronic devices,
• wherein the first and second stacks each comprise exactly n+1 layers with n≥2, and have a same total height,
• e10 is calculated such that e10≠e20,
• the first stack is formed directly on the first substrate, and
• the second stack is formed directly on the second substrate.