Memory device and operating method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsWonyoung Jang, Taewon Kim
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AssigneeSamsung Electronics Co., Ltd.
InventorsWonyoung Jang, Taewon Kim
Estimating the term…
A memory device includes a row decoder including a plurality of row decoder blocks arranged in series, wherein the plurality of row decoder blocks are distinguished based on row addresses which the plurality of row decoder blocks take charge of; a repair address storage circuit including a fuse array in which a first plurality of faulty row addresses are stored; a repair control circuit including a plurality of repair control blocks arranged in series to correspond to the plurality of row decoder blocks; and a fuse tracking circuit configured to determine locations of row decoder blocks corresponding to a second plurality of faulty row addresses among the first plurality of faulty row addresses received from the repair address storage circuit and to control an operation of the row decoder based on the locations.
A memory device comprising:
A method of a memory device which comprises a plurality of row decoder blocks distinguished based on row addresses which the plurality of row decoder blocks take charge of, the method comprising:
A memory device comprising:
Dependencies are inferred from the claim text.