Method of predicting an optimal process condition model to improve a yield of a semiconductor fabrication process and method of controlling a semiconductor fabrication process based on an optimal process condition model

A method of performing a unit process in a semiconductor fabrication process, the method comprising:

• collecting a plurality of process parameter information for the unit process of the semiconductor fabrication process;
• obtaining a plurality of first characteristic information of a test semiconductor wafer before performing the unit process and obtaining a plurality of second characteristic information of the test semiconductor wafer after performing the unit process;
• calculating a process global uniformity (PGU) using the plurality of first characteristic information and the plurality of second characteristic information;
• creating a data set corresponding to the unit process using the plurality of process parameter information and the PGU;
• creating a virtual process environment function with respect to the unit process using the data set;
• creating an optimal process condition model with respect to the unit process using the virtual process environment function;
• setting, by a user, at least one process target of the unit process,
• selecting, by a user, a process capability target for performing the unit process, creating a solution set with respect to the at least one process target of the unit process using the optimal process condition model;
• creating a control information of the unit process using the solution set, and
• performing the unit process using the at least one process target and the process capability target on a production semiconductor wafer,
• wherein the process global uniformity is calculated with respect to changes in values of two or more from among a thickness, a size, a shape, crystallinity, a resistance, a current-voltage characteristic, a composition, and a concentration,
• wherein the optimal process condition model creates the control information that satisfies the selected process capability target, and
• wherein the control information comprises at least one of a plurality of information for performing the unit process selected from a process pressure, a process temperature, a process time, a process period, a number of a process performance, a kind of a process gas, a kind of a process material, a flux of a supply gas, an applying power source, a bias voltage, an impedance and an exposing amount.