Resist underlayer film-forming composition

A method for producing a stepped semiconductor device, comprising the steps of:

• forming a resist underlayer film on a stepped semiconductor substrate using a resist underlayer film-forming composition comprising at least one compound represented by the following formula (A), at least one polymer consisting of unit structures represented by the following formula (B), and a solvent:
• wherein X represents an n-valent organic group having 2 to 50 carbon atoms, and has at least one benzene ring, naphthalene ring, anthracene ring, or pyrene ring or a combination thereof, each of n quantity of Y independently represents an aromatic hydrocarbon group having 6 to 60 carbon atoms and having at least one hydroxy group, and n represents an integer of 1 to 4,
• wherein R1 represents a hydrogen atom or a methyl group, and R2 represents at least one group selected from the following formulae (B-1) to (B-3):
• wherein, in formulae (B-1) to (B-3), * represents a bonding site to the adjacent oxygen atom;
• forming a resist film on the formed resist underlayer film;
• irradiating the formed resist film with a light or an electron beam and subjecting the resultant resist film to development to form a resist pattern;
• etching the resist underlayer film through the formed resist pattern to form a patterned resist underlayer film;
• and
• processing the stepped semiconductor substrate through the patterned resist underlayer film, wherein the processing is conducted by dry etching.

A method for producing a stepped semiconductor device, comprising the steps of:

• forming a resist underlayer film on a stepped semiconductor substrate using a resist underlayer film-forming composition comprising at least one compound represented by the following formula (A), at least one polymer consisting of unit structures represented by the following formula (B), and a solvent:
• wherein X represents an n-valent organic group having 2 to 50 carbon atoms, each of n quantity of Y independently represents an aromatic hydrocarbon group having 6 to 60 carbon atoms and has a benzene ring, a naphthalene ring, an anthracene ring, or a pyrene ring, each having at least one hydroxy group, or a combination thereof, and n represents an integer of 1 to 4,
• wherein R1 represents a hydrogen atom or a methyl group, and R2 represents at least one group selected from the following formulae (B-1) to (B-3):
• wherein, in formulae (B-1) to (B-3), * represents a bonding site to the adjacent oxygen atom;
• forming a resist film on the formed resist underlayer film;
• irradiating the formed resist film with a light or an electron beam and subjecting the resultant resist film to development to form a resist pattern;
• etching the resist underlayer film through the formed resist pattern to form a patterned resist underlayer film;
• and
• processing the stepped semiconductor substrate through the patterned resist underlayer film, wherein the processing is conducted by dry etching.

A method for producing a stepped semiconductor device, comprising the steps of:

• forming a resist underlayer film on a stepped semiconductor substrate using a resist underlayer film-forming composition comprising at least one compound represented by the following formula (A), at least one polymer consisting of unit structures represented by the following formula (B), and a solvent:
• wherein X represents an n-valent organic group having 2 to 50 carbon atoms, each of n quantity of Y independently represents an aromatic hydrocarbon group having 6 to 60 carbon atoms and having at least one hydroxy group, and n is 2,
• wherein R1 represents a hydrogen atom or a methyl group, and R2 represents at least one group selected from the following formulae (B-1) to (B-3):
• wherein, in formulae (B-1) to (B-3), * represents a bonding site to the adjacent oxygen atom;
• forming a resist film on the formed resist underlayer film;
• irradiating the formed resist film with a light or an electron beam and subjecting the resultant resist film to development to form a resist pattern;
• etching the resist underlayer film through the formed resist pattern to form a patterned resist underlayer film;
• and
• processing the stepped semiconductor substrate through the patterned resist underlayer film, wherein the processing is conducted by dry etching.

A method for producing a stepped semiconductor device, comprising the steps of:

• forming a resist underlayer film on a stepped semiconductor substrate using a resist underlayer film-forming composition comprising at least one compound represented by the following formula (A), at least one polymer consisting of unit structures represented by the following formula (B), and a solvent having a boiling point of 160° C. or higher:
• wherein X represents an n-valent organic group having 2 to 50 carbon atoms, each of n quantity of Y independently represents an aromatic hydrocarbon group having 6 to 60 carbon atoms and having at least one hydroxy group, and n represents an integer of 1 to 4,
• wherein R1 represents a hydrogen atom or a methyl group, and R2 represents at least one group selected from the following formulae (B-1) to (B-3):
• wherein, in formulae (B-1) to (B-3), * represents a bonding site to the adjacent oxygen atom;
• forming a resist film on the formed resist underlayer film;
• irradiating the formed resist film with a light or an electron beam and subjecting the resultant resist film to development to form a resist pattern;
• etching the resist underlayer film through the formed resist pattern to form a patterned resist underlayer film;
• and
• processing the stepped semiconductor substrate through the patterned resist underlayer film, wherein the processing is conducted by dry etching.