Semiconductor etching solution
AssigneesFUJIFILM Corporation, Fujifilm Electronic Materials U.S.A., Inc.
InventorsAtsushi Mizutani, Mick Bjelopavlic, Carl Ballesteros
Life of this patent
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Abstract
Provided is a semiconductor etching solution having a large etching ratio of SiGe relative to Si when an object containing Si and SiGe is treated and having excellent storage stability. The semiconductor etching solution includes: a fluoride ion source; a carboxylic acid; a percarboxylic acid; hydrogen peroxide; and bromide ions, and a content of the bromide ions is less than 500 mass ppm with respect to a total mass of the semiconductor etching solution.
Claims16
A semiconductor etching solution comprising:
- a fluoride ion source;
- a carboxylic acid;
- a percarboxylic acid;
- hydrogen peroxide;
- bromide ions;
- and
- an organic compound having a sulfonic acid group,
- wherein a content of the bromide ions is less than 500 mass ppm with respect to a total mass of the semiconductor etching solution, and
- the organic compound having the sulfonic acid group is a polymer having a repeating unit having a sulfonic acid group.
A semiconductor etching solution comprising:
- a fluoride ion source;
- a carboxylic acid;
- a percarboxylic acid;
- hydrogen peroxide;
- at least one compound selected from the group consisting of N-(3-aminopropyl)diethanolamine, 3-morpholino-1,2-propanediol, and diisopropanolamine;
- at least one compound selected from the group consisting of naphthalene sulfonic acid formalin condensate, methanesulfonic acid, C12 to C14 alkyldiphenyl ether disulfonic acid, and triisopropylnaphthalene sulfonic acid;
- bromide ions;
- and
- an organic compound having a sulfonic acid group,
- wherein a content of the bromide ions is less than 500 mass ppm with respect to a total mass of the semiconductor etching solution, and
- the organic compound having the sulfonic acid group is a polymer having a repeating unit having a sulfonic acid group.
A semiconductor etching solution comprising:
- a fluoride ion source;
- a carboxylic acid;
- a percarboxylic acid;
- hydrogen peroxide;
- and
- an organic compound having a sulfonic acid group,
- wherein a content of the carboxylic acid, a content of the percarboxylic acid, and a content of the hydrogen peroxide are 55.0 to 94.0% by mass, 5.0 to 25.0% by mass, and 1.0 to 20.0% by mass, respectively, with respect to a total mass of the carboxylic acid, the percarboxylic acid, and the hydrogen peroxide, and
- the organic compound having the sulfonic acid group is a polymer having a repeating unit having a sulfonic acid group.
A semiconductor etching solution comprising:
- a fluoride ion source;
- a carboxylic acid;
- a percarboxylic acid;
- hydrogen peroxide;
- at least one compound selected from the group consisting of N-(3-aminopropyl)diethanolamine, 3-morpholino-1,2-propanediol, and diisopropanolamine;
- at least one compound selected from the group consisting of naphthalene sulfonic acid formalin condensate, methanesulfonic acid, C12 to C14 alkyldiphenyl ether disulfonic acid, and triisopropylnaphthalene sulfonic acid;
- and
- an organic compound having a sulfonic acid group,
- wherein a content of the carboxylic acid, a content of the percarboxylic acid, and a content of the hydrogen peroxide are 55.0 to 94.0% by mass, 5.0 to 25.0% by mass, and 1.0 to 20.0% by mass, respectively, with respect to a total mass of the carboxylic acid, the percarboxylic acid, and the hydrogen peroxide, and
- the organic compound having the sulfonic acid group is a polymer having a repeating unit having a sulfonic acid group.
Dependencies are inferred from the claim text.