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US 12,662,430 B2Granted
Cr—Si—C-based sintered body
AssigneeTosoh Corporation
InventorsHiroyuki Hara, Masami Mesuda, Ayaka Masuda
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Abstract
An object of the present invention is to provide a high-density Cr—Si—C-based sintered body including chromium (Cr), silicon (Si) and carbon (C) and is furthermore to provide at least one of the high-density Cr—Si—C-based sintered body, a sputtering target including the sintered body or a method for producing a film using the sputtering target. The present invention can provide a Cr—Si—C-based sintered body including chromium (Cr), silicon (Si) and carbon (C), wherein the sintered body has a relative density of 90% or more and a porosity of 13% or less.
Claims19
A sintered body, consisting of:
- 1 to 20 wt % carbon;
- 20 to 70 wt % silicon;
- and
- chromium (Cr),
- wherein the sintered body has a relative density of 90% or more and a porosity of 13% or less.
2 more elements
Dependencies are inferred from the claim text.