Semiconductor device and method of manufacturing the same
AssigneeAdvanced Semiconductor Engineering, Inc.
InventorsJhao-Cheng Chen, Huang-Hsien Chang, Wen-Long Lu, Shao Hsuan Chuang, Ching-Ju Chen, Tse-Chuan Chou
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Abstract
A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.
Claims9
A semiconductor device, comprising:
- a substrate having a top surface;
- a conductive element disposed on the top surface of the substrate, and comprising:
- a first metal layer having a first top side surface facing away from the top surface of the substrate, and a first lateral side surface connecting to the first top side surface;
- and
- a second metal layer disposed over the first metal layer, directly contacting the first metal layer, and having a second top side surface facing away from the first top side surface of the first metal layer, and a second lateral side surface connecting to the second top side surface;
- and
- a first monolithic passivation layer directly contacting the first lateral side surface of the first metal layer and the second lateral side surface of the second metal layer, wherein the first monolithic passivation layer has a top surface facing away from the top surface of the substrate, and a portion of the second metal layer extends beyond the top surface of the first monolithic passivation layer along a first direction substantially perpendicular to the top surface of the substrate, wherein the first monolithic passivation layer directly contacts a periphery edge of an interface between the first metal layer and the second metal layer.
Dependencies are inferred from the claim text.