Hybrid bonding apparatus and hybrid bonding method using the same

A hybrid bonding apparatus comprising:

• a plurality of chambers;
• and
• a transferer configured to transfer a plurality of wafers between the plurality of chambers and transfer a plurality of bonded wafers to an annealing chamber, the plurality of wafers comprising a plurality of substrate wafers and a plurality of die supply wafers,
• wherein at least one of the plurality of chambers comprises:
• a wafer supplier configured to store the plurality of wafers;
• and
• a bonding device configured to bond the plurality of wafers, the bonding device comprising:
• a bonder configured to bond dies on the plurality of substrate wafers from the plurality of die supply wafers;
• and
• a pre-annealing oven configured to primarily anneal the plurality of bonded substrate wafers, and
• wherein the annealing chamber is configured to secondary anneal the plurality of primarily annealed substrate wafers,
• wherein the bonding device comprises a plurality of bonding devices,
• wherein when a bonding process is performed by a bonder included in a bonding device among the plurality of bonding devices, a primary annealing process is simultaneously performed by a pre-annealing oven included in another bonding device among the plurality of bonding devices,
• wherein the bonding device comprises a first bonding device and a second bonding device, and
• wherein the hybrid bonding apparatus further comprises a processor configured to predict a time at which the bonding process is completed by the first bonding device, and control a condition of the primary annealing process such that the primary annealing process is completed by the second bonding device based on an expected bonding completion time.

A hybrid bonding method comprising:

• supplying, by a wafer supplier, a plurality of wafers comprising a plurality of substrate wafers and a plurality of die supply wafers to a bonding device;
• bonding, by the bonding device, dies on the plurality of substrate wafers from the plurality of die supply wafers;
• primarily annealing, by the bonding device, the plurality of bonded substrate wafers;
• transferring, by a transferer, the plurality of primarily annealed substrate wafers to an annealing chamber for secondary annealing;
• and
• secondary annealing, by the annealing chamber, the plurality of primarily annealed substrate wafers,
• wherein the bonding device comprises a plurality of bonding devices, and
• wherein the bonding and the primarily annealing are simultaneously performed by different bonding devices among the plurality of bonding devices.