Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device comprising steps of:

• (a) preparing a metal plate made of a conductive material, a first semiconductor chip having a first pad electrode formed on an upper surface thereof and a third pad electrode formed on a lower surface thereof, a second semiconductor chip having a second pad electrode formed on an upper surface thereof, a first conductive layer provided on an upper surface of the first pad electrode and electrically connected to the first pad electrode, and a second conductive layer provided on an upper surface of the second pad electrode and electrically connected to the second pad electrode;
• (b) after the step (a), forming a first die pad by selectively etching the metal plate;
• (c) after the step (b), disposing the first semiconductor chip on an upper surface of the first die pad such that the third pad electrode is electrically connected to the first die pad;
• (d) after the step (c), sealing the first die pad, the first semiconductor chip, the second semiconductor chip, the first conductive layer, and the second conductive layer with a first resin layer so as to cover each upper surface of the first conductive layer and the second conductive layer;
• (e) after the step (d), polishing the first resin layer to expose each upper surface of the first conductive layer and the second conductive layer from the first resin layer;
• (f) after the step (e), exposing a lower surface of the first die pad from the first resin layer;
• and
• (g) after the step (f), providing one or more passive elements on each upper surface of the first conductive layer and the second conductive layer so as to be electrically connected to the first conductive layer and the second conductive layer.