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US 12,660,642 B2Granted
Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorHiroyuki Masumoto
Life of this patent
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Abstract
A semiconductor device includes an insulating layer having a first surface and a second surface opposite to the first surface. The semiconductor device includes at least one semiconductor element located on a side of the first surface. The semiconductor device includes a first metal sinter and a second metal sinter. The first metal sinter is in contact with the first surface of the insulating layer and the semiconductor element, and bonds the insulating layer and the semiconductor element. The second metal sinter is in contact with the second surface of the insulating layer.
Claims12
A semiconductor device comprising:
- an insulating layer having a first surface and a second surface opposite to the first surface;
- at least one semiconductor element located on a side of the first surface;
- a first metal sinter in direct contact with the first surface of the insulating layer and the semiconductor element, and bonding the insulating layer and the semiconductor element;
- a second metal sinter in contact with the second surface of the insulating layer;
- a case covering the semiconductor element;
- and
- a third metal sinter in direct contact with the first surface of the insulating layer, an adhesive being provided between the third metal sinter and the case,
- wherein the insulating layer is made of ceramics, and
- wherein the first metal sinter, the second metal sinter, and the third metal sinter are, respectively, hardened materials of pastes comprising metal particles and a solvent.
6 more elements
Dependencies are inferred from the claim text.