Electrical fuse bit cell in integrated circuit having backside conducting lines

An integrated circuit comprising:

• a substrate;
• a semiconductor structure at a front side of the substrate;
• a transistor in the semiconductor structure;
• a first front-side horizontal conducting line extending in a first direction at the front side of the substrate and directly connected to a first terminal of the transistor through a front-side terminal via-connector;
• a backside conducting line at a backside of the substrate and directly connected to a second terminal of the transistor through a backside terminal via-connector;
• and
• a backside fuse element at a backside of the substrate and conductively connected to the backside conducting line.

A method comprising:

• fabricating a transistor in a semiconductor structure at a front-side of a substrate;
• forming a front-side horizontal conducting line extending in a first direction at the front-side of the substrate, and connecting the front-side horizontal conducting line to a first terminal of the transistor through a front-side terminal via-connector;
• forming a front-side vertical conducting line extending in a second direction at the front-side of the substrate, and connecting the front-side vertical conducting line to the front-side horizontal conducting line through a front-side metal-to-metal via-connector;
• forming a backside terminal via-connector that passes through the substrate;
• forming a backside first-metal conducting line in a first backside metal layer at a backside of the substrate, and connecting the backside first-metal conducting line to a second terminal of the transistor through the backside terminal via-connector;
• forming a backside second-metal conducting line in a second backside metal layer at the backside of the substrate, and connecting the backside second-metal conducting line to the backside first-metal conducting line through a metal-to-metal via-connector;
• and
• forming a backside fuse element either in the second backside metal layer or in a third backside metal layer, and connecting the backside fuse element to the backside second-metal conducting line.