Interconnect structure

A semiconductor device, comprising:

• a conductive feature in a substrate;
• a first barrier layer, surrounding a first metallization structure, in a first dielectric layer over the substrate;
• a second barrier layer, surrounding a second metallization structure, in a second dielectric layer over the first dielectric layer;
• a third barrier layer, surrounding a first via structure, in a first inter-layer dielectric (ILD) layer between the substrate and the first dielectric layer, wherein the first via structure electrically couples the conductive feature to the first metallization structure;
• a second via structure in a second ILD layer between the first dielectric layer and the second dielectric layer,
• wherein the second ILD layer is a single layer formed of a material that is a silicon oxide or a low dielectric constant (low-k) material, and
• wherein an entirety of a side surface of the second via structure is in direct contact with a fourth barrier layer, an entirety of a bottom surface of the second via structure is in direct contact with the fourth barrier layer, an entirety of a top surface of the second via structure is in direct contact with the second barrier layer, and an entirety of a bottom surface of the second metallization structure is in direct contact with the second barrier layer,
• wherein the bottom surface of the second metallization structure is wider than the top surface of the second via structure;
• and
• a conductive protection structure in the second ILD layer between the first metallization structure and the second via structure,
• wherein a top surface of the first metallization structure is in contact with the conductive protection structure and the second ILD layer,
• wherein, from a side view of the semiconductor device, the second via structure is narrower than the conductive protective structure, and the conductive protection structure is narrower than the first metallization structure,
• wherein the conductive protection structure, the first via structure, and the second via structure are vertically aligned with respect to one another, and
• wherein the first metallization structure, the conductive protection structure, the first via structure, and the second via structure are vertically aligned with respect to one another and each has a width,
• wherein the width of the second via structure is smaller than and contained within the width of the conductive protection structure, and
• wherein the width of the conductive protection structure is smaller than and contained within the width of the first metallization structure.

A semiconductor device, comprising:

• a substrate;
• a conductive feature in the substrate;
• a first interlayer dielectric (ILD) layer over the conductive feature and the substrate;
• a first via structure in the first ILD layer;
• a first barrier layer in the first ILD layer and surrounding the first via structure;
• a second barrier layer, surrounding a first conductive structure, in contact with the first via structure, the first conductive structure comprising a first metallization structure;
• a second ILD layer in contact with the second barrier layer and the first conductive structure, wherein the second ILD layer is a single layer formed of a material that is a silicon oxide or a low dielectric constant (low-k) material;
• a conductive protection structure in the second ILD layer,
• wherein a top surface of the first metallization structure is in contact with the conductive protection structure and the second ILD layer;
• a third barrier layer extending through at least part of the second ILD layer to intersect with a top surface of the conductive protection structure;
• and
• a second via structure comprising a conductive material in the second ILD layer and surrounded by the third barrier layer
• wherein, from a side view of the semiconductor device, the second via structure is narrower than the conductive protective structure, and the conductive protection structure is narrower than the first metallization structure,
• wherein an entirety of a side surface of the second via structure is in direct contact with the third barrier layer, an entirety of a bottom surface of the second via structure is in direct contact with the third barrier layer, an entirety of a top surface of the second via structure is in direct contact with a fourth barrier layer, and an entirety of a bottom surface of a second metallization structure is in direct contact with the fourth barrier layer,
• wherein the second metallization structure is above the second via structure, and wherein the bottom surface of the second metallization structure is wider than the top surface of the second via structure,
• wherein the first metallization structure, the conductive protection structure, the first via structure, and the second via structure are vertically aligned with respect to one another and each has a width,
• wherein the width of the second via structure is smaller than and contained within the width of the conductive protection structure, and
• wherein the width of the conductive protection structure is smaller than and contained within the width of the first metallization structure.