Washing solution and washing method for semiconductor substrate

Abstract

An object of the present invention is to provide a washing solution for a semiconductor device, the washing solution being excellent in the dissolution suppressing performance with respect to a metal layer containing tungsten and also being excellent in the washing performance of a dry etching residue. Another object of the present invention is to provide a washing method for a semiconductor substrate. The washing solution for a semiconductor device according to the present invention is a washing solution for a semiconductor device, containing one or more hydroxylamine compounds one selected from the group consisting of hydroxylamine and a hydroxylamine salt, a predetermined component A represented by Formula (1) described later, and water, in which a mass ratio of a content of the hydroxylamine compound to a content of the component A is 5 to 200.

Dependencies are inferred from the claim text.