Magnetic memory device and method for manufacturing the same

A magnetic memory device comprising:

• a first interconnect;
• a magnetoresistive effect element provided on the first interconnect;
• a switching element provided above the magnetoresistive effect element;
• an insulating layer provided in an identical layer to the switching element and surrounding the switching element;
• and
• a hard mask provided on the switching element and the insulating layer and contacting with the switching element and the insulating layer,
• wherein an area of a first principal surface of the switching element that contacts with the hard mask is smaller than an area of a second principal surface of the hard mask that contacts with the switching element.

A method for manufacturing a magnetic memory device, the method comprising:

• forming a first interconnect and a second interconnect each extending in a first direction in a first insulating layer, the second interconnect being arranged beside the first interconnect in a second direction intersecting the first direction;
• depositing a second insulating layer on the first insulating layer, the second insulating layer, and the first interconnect;
• forming, on the second insulating layer, a resist mask corresponding to a first switching element to be provided on the first interconnect, a second switching element to be provided on the second interconnect and to be arranged adjacent to the first switching element in the first direction, and a third switching element to be provided on the second interconnect and to be arranged adjacent to the first switching element in the second direction;
• implanting arsenic in a plurality of regions of the second insulating layer where the resist mask is not formed, and forming the first switching element, the second switching element, and the third switching element;
• depositing a conductor and a stacked film corresponding to a first magnetoresistive effect element on the first switching element, a second magnetoresistive effect element on the second switching element, a third magnetoresistive effect element on the third switching element, and the second insulating layer;
• forming a hard mask;
• and
• processing the stacked film, the conductor, and the second insulating layer in sequence using the hard mask as a mask, whereby the second insulating layer is discontinuous at positions between the first switching element and the second switching element, and between the first switching element and the third switching element.