Semiconductor material and photoelectric conversion element
AssigneePanasonic Intellectual Property Management Co., Ltd.
InventorsToru Nakamura, Maki Hiraoka, Hiroshi Higuchi
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Abstract
A semiconductor material of the present disclosure is represented by formula (I) below, in which R1, R2, and R3 each independently represent a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms, R4 represents an aryl group, an amino group, a hydroxy group, or an alkoxy group, and n represents an integer greater than or equal to 2; and a photoelectric conversion element of the present disclosure includes a first electrode, a photoelectric conversion layer, a hole transport layer, and a second electrode in this order, in which the hole transport layer includes the semiconductor material of the present disclosure:
Claims5
A photoelectric conversion element, comprising:
- a first electrode, a photoelectric conversion layer, a hole transport layer, and a second electrode in this order, wherein
- the hole transport layer includes a semiconductor material represented by formula (I) below:
- wherein R1, R2, and R3 each independently represent a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms, R4 represents a phenyl group, and n represents an integer greater than or equal to 2, wherein
- the hole transport layer further includes tris(pentafluorophenyl)borane, and
- a molar ratio of the tris(pentafluorophenyl)borane with respect to a repeat unit of the semiconductor material is greater than or equal to 10% and is less than or equal to 60%.
Dependencies are inferred from the claim text.