Photo detector and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChen-Hao Chiang
Life of this patent
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Abstract
A photo detector includes a substrate, an exciting layer, a first insulation layer, a second insulation layer and a waveguide. The substrate has a recess. The exciting layer is formed in the recess and having a light incident surface and, a first side and a second side opposite to the first side. The first insulation layer is formed in the substrate and disposed on the first side of the exciting layer. The second insulation layer is formed in the substrate and disposed on the second side of the exciting layer. The waveguide is obliquely connected to the light incident surface of the exciting layer. There is an acute angle included between the light incident surface and an extension direction of the waveguide.
Claims20
A manufacturing method of a photo detector, comprising:
- providing a substrate, wherein a first insulation layer, a second insulation layer, a doped region and a waveguide are formed in the substrate;
- forming a recess in the substrate;
- and
- forming an exciting layer in the recess, wherein the exciting layer has a light incident surface, a first side and a second side opposite to the first side, the first insulation layer is disposed on the first side of the exciting layer, and the second insulation layer is disposed on the second side of the exciting layer, the waveguide is obliquely connected to the light incident surface of the exciting layer, and there is an acute angle included between the light incident surface and an extension direction of the waveguide;
- wherein the first insulation layer has a first lateral surface exposed from the recess, the doped region has a lateral surface exposed from the recess, and the first lateral surface of the first insulation layer extends to the lateral surface of the doped region.
A manufacturing method of a photo detector, comprising:
- providing a substrate, wherein a first STI layer, a second STI layer, a doped region and a waveguide are formed in the substrate;
- forming a recess in the substrate;
- and
- forming a germanium layer in the recess, wherein the germanium layer has a light incident surface, a first side and a second side opposite to the first side, the first STI layer is in contact with the first side of the germanium layer, and the second STI layer is contact with the second side of the germanium layer, the waveguide is obliquely connected to the light incident surface of the germanium layer;
- wherein the first STI layer has a first lateral surface exposed from the recess, the doped region has a lateral surface exposed from the recess, and the first lateral surface of the first STI layer extends to the lateral surface of the doped region.
A manufacturing method of a photo detector, comprising:
- providing a substrate, wherein a first insulation layer, a second insulation layer, a doped region and a waveguide are formed in the substrate;
- forming a recess in the substrate, wherein the first insulation layer forms a first lateral surface, and the second insulation layer forms a second lateral surface;
- and
- forming an exciting layer in the recess, wherein the exciting layer is in contact with the first lateral surface and the second lateral surface, the exciting layer has a light incident surface, a first side and a second side opposite to the first side, the first lateral surface of the first insulation layer is in contact with the first side of the exciting layer, the second lateral surface of the second insulation layer is in contact with the second side of the exciting layer, the waveguide is obliquely connected to the light incident surface of the exciting layer, and there is an acute angle included between the light incident surface and an extension direction of the waveguide;
- wherein the first lateral surface is exposed from the recess, the doped region has a lateral surface exposed from the recess, and the first lateral surface of the first insulation layer extends to the lateral surface of the doped region.
Dependencies are inferred from the claim text.