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US 12,660,366 B2Granted
Electromagnetic radiation detector with improved performance
AssigneeApple Inc.
InventorsMatthew T. Morea, Daniel Mahgerefteh, Romain F. Chevallier
Life of this patent
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Abstract
An electromagnetic radiation detector includes a PN junction between two group III-V semiconductor materials. The PN junction is defined by in-situ doping of the layers to improve the quality of the junction and the performance of the electromagnetic radiation detector.
Claims20
An electromagnetic radiation detector, comprising:
- an electromagnetic radiation absorber layer comprising a first group III-V semiconductor material and having a first conductivity type;
- an anode layer disposed on a first surface of the electromagnetic radiation absorber layer and having an anode contact disposed in contact with a surface of the anode layer:
- a cathode layer disposed on a second surface of the electromagnetic radiation absorber layer, wherein:
- the cathode layer comprises a second group III-V semiconductor material;
- the cathode layer has a second conductivity type opposite the first conductivity type;
- and
- the cathode layer forms a PN junction with the electromagnetic radiation absorber layer, the PN junction being defined by in-situ doping of the cathode layer and in-situ doping of the electromagnetic radiation absorber layer;
- and
- one or more doped regions in the cathode layer, wherein:
- the one or more doped regions have the first conductivity type and are defined by ex-situ doping of the cathode layer;
- and
- the one or more doped regions define a boundary of the PN junction between the cathode layer and the electromagnetic radiation absorber layer.
9 more elements
A method for manufacturing an electromagnetic radiation detector, comprising:
- providing an electromagnetic radiation absorber layer, the electromagnetic radiation absorber layer comprising a first group III-V semiconductor material and having a first conductivity type defined by an in-situ doping process;
- providing an anode layer disposed on a first surface of the electromagnetic radiation absorber and having an anode contact disposed in contact with a surface of the anode layer;
- providing a cathode layer disposed on a second surface of the electromagnetic radiation absorber layer, wherein:
- the cathode layer comprises a second group III-V semiconductor material and has a second conductivity type defined by an in-situ doping process, the second conductivity type being opposite the first conductivity type;
- and
- the cathode layer forms a PN junction with the electromagnetic radiation absorber layer defined by in-situ doping of the cathode layer and in-situ doping of the electromagnetic radiation absorber layer;
- and
- providing one or more doped regions in the cathode layer via an ex-situ doping process, the one or more doped regions having the first conductivity type and defining a boundary of the PN junction between the cathode layer and the electromagnetic radiation absorber layer.
5 more elements
Dependencies are inferred from the claim text.