Radio frequency circuit with back gate-assisted mixing of radio frequency and local oscillator signals

A structure comprising:

• a first transistor and a second transistor connected between a ground rail and a first local oscillator signal node;
• and
• a third transistor and a fourth transistor connected between the ground rail and a second local oscillator signal node,
• wherein the first transistor has a first front gate and a first back gate, the second transistor has a second front gate and a second back gate, the third transistor has a third front gate and a third back gate, and the fourth transistor has a fourth front gate and a fourth back gate,
• wherein the first front gate, the second back gate, the third front gate, and the fourth back gate are connected to a radio frequency signal node,
• wherein the first back gate and the fourth front gate are connected to the first local oscillator signal node,
• wherein the second front gate and the third back gate are connected to the second local oscillator signal node, and
• wherein the first transistor, the second transistor, the third transistor, and the fourth transistor are dual-gate semiconductor-on-insulator N-channel field effect transistors.

A structure comprising:

• a first transistor and a second transistor connected between a ground rail and a first local oscillator signal node;
• a third transistor and a fourth transistor connected between the ground rail and a second local oscillator signal node,
• wherein the first transistor has a first front gate and a first back gate, the second transistor has a second front gate and a second back gate, the third transistor has a third front gate and a third back gate, and the fourth transistor has a fourth front gate and a fourth back gate,
• wherein the first front gate, the second back gate, the third front gate, and the fourth back gate are connected to a radio frequency signal node to receive a radio frequency input signal,
• wherein the first back gate and the fourth front gate are connected to the first local oscillator signal node, and
• wherein the second front gate and the third back gate are connected to the second local oscillator signal node;
• an amplifier including:
• the first transistor;
• and the third transistor;
• and
• an oscillator including:
• the first local oscillator signal node;
• the second transistor;
• the second local oscillator signal node;
• and the fourth transistor,
• wherein the oscillator generates complementary local oscillator signals including a first local oscillator signal on the first local oscillator signal node and a second local oscillator signal on the second local oscillator signal node, and
• wherein front and back gate biasing of the first transistor, the second transistor, the third transistor, and the fourth transistor with different combinations of the radio frequency input signal and the complementary local oscillator signals mixes the radio frequency input signal with each of the complementary local oscillator signals to generate complementary intermediate frequency output signals including a first intermediate frequency output signal at a first intermediate frequency signal node between the first transistor and the second transistor and a second intermediate frequency output signal at a second intermediate frequency signal node between the third transistor and the fourth transistor.