Acoustic wave device with multilayer piezoelectric substrate for reduced spurious signals
AssigneeSkyworks Solutions, Inc.
InventorsYuya Hiramatsu, Takuya Ushiyama, Rei Goto
Life of this patent
Estimating the term…
Abstract
An acoustic wave resonator is disclosed. The acoustic wave resonator can include a plurality of interdigital transducer electrodes and a multilayer piezoelectric substrate (MPS) adjacent the plurality of interdigital transducer electrodes. The MPS includes a first substrate layer of a piezoelectric material, and a second substrate layer of silicon that is bonded to the first layer. The silicon has a cut direction and/or acoustic wave propagation direction that is different from those of a silicon substrate. The silicon substrate has a cut direction and a propagation direction property defined by the silicon cut angle of {100} and the propagation direction <110>.
Claims20
An acoustic wave resonator comprising:
- a plurality of interdigital transducer electrodes;
- and
- a multilayer piezoelectric substrate adjacent the plurality of interdigital transducer electrodes, the multilayer piezoelectric substrate including a first substrate layer of a piezoelectric material and a second substrate layer of silicon bonded to the first substrate layer, the silicon having a cut direction and/or acoustic wave propagation direction that is different from those of a silicon substrate, the silicon substrate having a cut direction and a propagation direction property defined by a silicon cut angle of {100} and a propagation direction <110>, the second substrate layer bonded to the first substrate layer using a titanium metal layer as an adhesive layer.
An acoustic wave resonator comprising:
- a plurality of interdigital transducer electrodes;
- and
- a multilayer piezoelectric substrate adjacent the plurality of interdigital transducer electrodes, the multilayer piezoelectric substrate including a first substrate layer of a piezoelectric material, and the multilayer piezoelectric substrate further including a second substrate layer of silicon bonded to the first substrate layer which is different from a silicon substrate, having a wafer cut angle and a propagation direction of the acoustic wave defined by a Euler angle of (90, 90, 45), the second substrate layer bonded to the first substrate layer using a titanium metal layer as an adhesive layer.
Dependencies are inferred from the claim text.