Terahertz beam steering antenna arrays

A semiconductor device, comprising:

• a semiconductor substrate;
• and
• a plurality of metal layers, including a top metal layer which is exposed;
• wherein the top metal layer is formed as a plurality of patch antennas, wherein each patch antenna is a rectangle having two sets of parallel sides and comprises three contact points, a first contact point (P1);
• a second contact point (P2) disposed at a midpoint of a first side;
• and a third contact point (P3) disposed at a midpoint of a second side, opposite the first side, and wherein the first contact point (P1) is disposed at a midpoint of a side that is perpendicular to the first side and the second side;
• and wherein a plurality of storage elements and a one bit phase shifter is disposed in the semiconductor substrate beneath each respective patch antenna, wherein the plurality of storage elements stores a plurality of phase states that are supplied to the one bit phase shifter, and wherein the one bit phase shifter comprises two field effect transistors (FETs), wherein a first transistor includes a gate and a source and a drain, wherein one of the source or drain is in electrical contact with the first contact point (P1) and the other of the source or drain is in electrical contact with the second contact point (P2) and the gate is in electrical contact with a control signal provided by the storage elements;
• and wherein a second transistor includes a gate and a source and a drain, wherein one of the source or drain is in electrical contact with the first contact point (P1) and the other of the source or drain is in electrical contact with the third contact point (P3) and the gate is in electrical contact with a signal that is a complement of the control signal.