Thin film forming apparatus and method

A thin-film forming apparatus, comprising:

• a chamber configured to hold a vacuum formed in the chamber;
• a deposition object placed at a set position inside the chamber;
• a sputtering target placed inside the chamber and including particles for deposition;
• a gas supply module configured to supply a gas for forming a plasma state inside the chamber;
• a step-coverage control module located inside the chamber and facing the deposition object;
• and
• a voltage supply module located inside the chamber and configured to supply an electric current to the sputtering target,
• wherein the deposition object is deposited with the particles provided from the sputtering target based on the electric current,
• wherein the step-coverage control module is configured to control an amount of the particles moving toward the deposition object through a repositioning maneuver to control a step coverage of the deposition object,
• wherein the step-coverage control module includes a central part arranged to sandwich the deposition object with the sputtering target of the deposition object and configured to control an amount of the particles moving toward the deposition object,
• wherein the step-coverage control module is configured to control the central part to adjust the amount of the particles moving toward the deposition object by a motion approaching a surface of the deposition object and a motion departing from the deposition object to,
• wherein the step-coverage control module further comprises a first outer part located on one side of the central part to face the deposition object and configured to adjust the amount of the particles moving toward the deposition object,
• wherein the first outer part is configured to perform a motion of approaching the central part and a motion of departing from the central part, and to take the motion of approaching the central part and the motion of departing from the central part to help to adjust the amount of the particles moving toward the deposition object,
• wherein the step-coverage control module further comprises a second outer part located on an other side of the central part to face the deposition object and configured to adjust the amount of the particles moving toward the deposition object,
• wherein the second outer part takes the motion of approaching the central part and the motion of departing from the central part to help to adjust the amount of the particles moving toward the deposition object,
• wherein the first outer part is configured to perform a motion of approaching a surface of the deposition object and a motion of departing from the surface of the deposition object, and to take the motion of approaching the central part to the motion of departing from the surface of the deposition object to help to adjust the amount of the particles moving toward the deposition object,
• wherein the second outer part is configured to perform a motion of approaching a surface of the deposition object and a motion of departing from the deposition object, and to take one or more motions for helping to adjust the amount of the particles moving toward the deposition object,
• wherein the deposition object includes a deposition object surface formed with a flat portion and includes a depression recessed in contrast to the flat portion,
• wherein the step-coverage control module is configured to reinforce a step coverage between the flat portion and the depression of the deposition object,
• wherein the first and second outer parts are movably located on the one side and the other side of the central part, respectively, and configured to be movable toward or away from the central part disposed between the first outer part and the second outer part to adjust the amount of the particles moving toward the deposition object, and wherein the first and second outer parts have a stepped shape.