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US 12,658,412 B2Granted
Etching method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsKoki Mukaiyama, Maju Tomura, Yoshihide Kihara
Life of this patent
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Abstract
An etching method includes: (a) providing a substrate including a base film and a mask having an opening and formed on the base film; (b) etching the base film using plasma; and (c) supplying hydrogen fluoride to the substrate under a pressure of 13.3 Pa or higher.
Claims22
An etching method comprising:
- (a) providing a substrate including a base film and a mask formed on the base film, the mask having an opening;
- (b) etching the base film using plasma;
- (c) supplying hydrogen fluoride to the substrate under a pressure of 13.3 Pa or higher;
- and
- (f) after (c), supplying a silicon-containing gas to the substrate.
2 more elements
An etching method comprising:
- (a) providing a substrate including a base film and a mask formed on the base film, the mask having an opening;
- (b) etching the base film using plasma;
- (c) supplying hydrogen fluoride to the substrate;
- and
- after (c), supplying a silicon-containing gas to the substrate,
- wherein in (c), a temperature of a substrate support supporting the substrate is maintained at −80° C. or higher.
3 more elements
A plasma processing apparatus comprising:
- a chamber;
- a substrate support configured to support a substrate in the chamber;
- a gas supply configured to supply a first processing gas and a second processing gas into the chamber;
- a plasma generator configured to generate plasma from the first processing gas in the chamber;
- and
- a controller, wherein the controller is configured to execute a process comprising:
- providing the substrate including a base film and a mask formed on the base film, the mask having an opening;
- etching the base film using the plasma of the first processing gas;
- supplying the second processing gas including hydrogen fluoride to the substrate under a pressure of 13.3 Pa or higher;
- and
- after supplying the second processing gas, supplying a silicon-containing gas to the substrate.
8 more elements
Dependencies are inferred from the claim text.